Numéro
J. Phys. IV France
Volume 02, Numéro C2, Septembre 1991
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
Page(s) C2-873 - C2-880
DOI http://dx.doi.org/10.1051/jp4:19912104
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse

J. Phys. IV France 02 (1991) C2-873-C2-880

DOI: 10.1051/jp4:19912104

PROCESSING OF WSi2 FILMS BY LOW PRESSURE CHEMICAL VAPOR DEPOSITION FROM IN SITU CHLORINATION OF METAL

E. BLANQUET1, N. THOMAS1, P. SURYANARAYANA2, C. VAHLAS1, C. BERNARD1 and R. MADAR3

1  LTPTCM, ENSEEG, BP. 75, F-38402 Saint Martin d'Hères, France
2  SDA, CEERI, PILANI, 333031, India
3  LMGP, ENSPG, BP. 46, F-38402 Saint Martin d'Hères, France


Abstract
An experimental investigation of WSi2 thin films by LPCVD from in situ elaborated metal chlorides is presented. The films composition and properties are studied as a function of input gas phase composition. Preliminary results show that WSi2 films can selectively grow on silicon. An attempt has been made to understand the results in terms of deposition conditions.



© EDP Sciences 1991