Numéro
J. Phys. IV France
Volume 02, Numéro C2, Septembre 1991
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
Page(s) C2-865 - C2-871
DOI http://dx.doi.org/10.1051/jp4:19912103
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse

J. Phys. IV France 02 (1991) C2-865-C2-871

DOI: 10.1051/jp4:19912103

CVD CARBONYL THIN FILMS OF TUNGSTEN AND MOLYBDENUM AND THEIR SILICIDES - A GOOD ALTERNATIVE TO CVD FLUORIDE TUNGSTEN TECHNOLOGY

K.A. GESHEVA1, V. ABROSIMOVA2 and G.D. BESHKOV3

1  Central laboratory of Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, 1784 Sofia, Bulgaria
2  Institute of Physical Problems in Microelectronics Technologies, Academy of Sciences of USSR, 142432 Chernogolovska, Moscow, USSR
3  Institute of solid State Physics, Bulgarian Academy of Sciences, 1748 Sofia, Bulgaria


Abstract
By thermal decomposition of W(CO)6 and Mo(CO)6 at temperatures below 400°C and atmospheric pressure thin films on Si wafers were grown. This technology ia shown to be an alternative to the fluotide one which uses WF6 as a source material. Low resistivities together with a lack of errosion of Si substrate are possible. As-deposited films contain considerable amount of carbon and oxygen. By proper thermal annealing in H2 atmosphere as well as by rapid thermal annealing in vacuum optimum conditions were found to obtain low resistive metal and metal silicides films. Auger electron spectroscopy and XRD-studies were used to show the connection between the chemical composition and structure of the two kinds of films on the one hand and their resistivities on the other.



© EDP Sciences 1991