Numéro
J. Phys. IV France
Volume 02, Numéro C2, Septembre 1991
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
Page(s) C2-79 - C2-85
DOI http://dx.doi.org/10.1051/jp4:1991209
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse

J. Phys. IV France 02 (1991) C2-79-C2-85

DOI: 10.1051/jp4:1991209

AN UNDERSTANDING OF IN SITU BORON DOPED POLYSILICON FILMS BY CHARACTERIZATION AND SIMULATION

C. AZZARO1, E. SCHEID2, D. BIELLE-DASPET2, P. DUVERNEUIL1 and P. BOUDRE3

1  LGC URA, 192 du CNRS-ENSIGC, Chemin de la Loge, F-31078 Toulouse cedex, France
2  LAAS du CNRS, 7, av. du Colonel Roche, F-31077 Toulouse cedex, France
3  MOTOROLA, av. du Général Eisenhower, F-31023 Toulouse cedex, France


Abstract
A new understanding of the deposition of in situ boron doped polysilicon based on a comparison between experimental results and modeling predictions, is proposed. The depletion of both silane and boron trichloride is put in evidence and the necessity of the use of injectors is established.



© EDP Sciences 1991