Numéro
J. Phys. IV France
Volume 02, Numéro C2, Septembre 1991
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
Page(s) C2-71 - C2-78
DOI http://dx.doi.org/10.1051/jp4:1991208
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse

J. Phys. IV France 02 (1991) C2-71-C2-78

DOI: 10.1051/jp4:1991208

A NOVEL WAFER CAGE FOR BETTER UNIFORMITY OF PHOSPHORUS DOPED SILICON LAYERS : EXPERIMENTAL STUDY AND MODELLING

C. AZZARO, P. DUVERNEUIL and J.P. COUDERC

Laboratoire de Génie Chimique, LGC-URA 192 du CNRS, ENSIGC, Chemin de la Loge, F-31078 Toulouse cedex, France


Abstract
The deposition of in situ phosphorus doped polycrystalline silicon, an operation which involves complex physico-chemical phenomena, has been treated via both a modeling and an experimental approach. This analysis has contributed to provide better insights in the mechanism of phosphorus doped polysilicon deposition and has helped to design a new kind of a wafers cage, improving considerably the growth rate uniformity on each substrate.



© EDP Sciences 1991