J. Phys. IV France 02 (1991) C2-71-C2-78
A NOVEL WAFER CAGE FOR BETTER UNIFORMITY OF PHOSPHORUS DOPED SILICON LAYERS : EXPERIMENTAL STUDY AND MODELLINGC. AZZARO, P. DUVERNEUIL and J.P. COUDERC
Laboratoire de Génie Chimique, LGC-URA 192 du CNRS, ENSIGC, Chemin de la Loge, F-31078 Toulouse cedex, France
The deposition of in situ phosphorus doped polycrystalline silicon, an operation which involves complex physico-chemical phenomena, has been treated via both a modeling and an experimental approach. This analysis has contributed to provide better insights in the mechanism of phosphorus doped polysilicon deposition and has helped to design a new kind of a wafers cage, improving considerably the growth rate uniformity on each substrate.
© EDP Sciences 1991