Numéro
J. Phys. IV France
Volume 02, Numéro C2, Septembre 1991
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
Page(s) C2-47 - C2-54
DOI http://dx.doi.org/10.1051/jp4:1991205
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse

J. Phys. IV France 02 (1991) C2-47-C2-54

DOI: 10.1051/jp4:1991205

CHARACTERIZATION AND OPTIMIZATION OF THE LPCVD SILICON OXYNITRIDE PROCESS, USING THE DESIGN OF EXPERIMENTS METHOD

L.J. de LEGÉ and M. HENDRIKS

ASM Micro Electronics Technology Centre, P.O. Box 100, 3720 AC Bilthoven, The Netherlands


Abstract
The LPCVD of silicon oxynitride has been characterized and optimized using the Design of Experiments method. The data of a half factorial matrix were converted with multiple linear regression analysis into an adequate empirical model : it appeared to be possible to predict the process output parameters (e.g. deposition rate), when applying more or less random input parameters (e.g. process pressure). The method supplies a tool to optimize a process in an efficient way : the optimum settings, found for the silicon oxynitride process are : temperature 800°C, ramp ±8°C, pressure 400 mTorr, DCS flow 70 sccm, (N2O + NH3) / DCS = 3, NH3 / N2O= 0.18. Corresponding predicted output parameters are : deposition rate 14.2 Å/min., uniformity over the wafer ±2 % and the uniformity over the boat 0 %. The refractive index becomes 1.70 ± 0.01.



© EDP Sciences 1991