J. Phys. IV France 02 (1991) C2-39-C2-46
2D MODELLING OF SILICON CHEMICAL VAPOR DEPOSITION IN AN IMPINGING JET REACTORY. WANG, C. CHAUSSAVOINE and F. TEYSSANDIER
CNRS, Institut de Science et de Génie des Matériaux et Procédés, Université, Avenue de Villeneuve, F-66860 Perpignan cedex, France
Numerical 2D modelling of silicon deposition in steady state conditions from a SiH4-H2 initial gas mixture is undertaken in an impinging jet configuration. Variable physical properties and dilute reactants in the carrier gas are assumed. The influence on both the deposition rate and the silicon deposition profile of transport phenomena and chemical reactions in the gas phase are studied. Homogeneous and heterogeneous reactions are considered with three chemical species resulting from silane dissociation in a H2 carrier gas : SiH4, SiH2 and Si2H6. Comparison is made between calculations achieved under kinetic control or thermodynamic equilibrium.
© EDP Sciences 1991