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Journal de Physique Archives > Journal de Physique IV
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10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 195-198

DOI: 10.1051/jp4:2006132037

Alkylation of Silicon(111) surfaces

S. Rivillon and Y.J. Chabal

Department of Chemistry and Biomedical Engineering, Laboratory for Surface Modification, 136 Frelinghuysen Road, Piscataway, NJ 08854-8019, USA


Abstract
Methylation of chlorine-terminated silicon (111) (Si-Cl) is investigated by Infra Red Absorption Spectroscopy (IRAS). Starting from an atomically flat H-terminated Si(111), the surface is first chlorinated by a gas phase process, then methylated using a Grignard reagent. Methyl groups completely replace Cl, and are oriented normal to the surface. The surface remains atomically flat with no evidence of etching.



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