Journal de Physique IV

Sommaire

J. Phys. IV France 127 (2005) 151-155
DOI: 10.1051/jp4:2005127023

VUV laser photodesorption of hydrogen from Si(100)(2 $\,{{\bf\times}}\,$ 1): H surface assisted by scanning tunneling microscope

D. Riedel, A.J. Mayne and G. Dujardin

Laboratoire de Photophysique Moléculaire, CNRS (UPR 3361), Université Paris-Sud, 91405 Orsay, France

Abstract
We report experiments of VUV laser photodesorption of hydrogen from Si(100) $(2{\times}1)$ :H surfaces assisted by an UHV room temperature scanning tunneling microscope (STM). The variation of isolated dangling bonds created has been measured for several fluences by a statistical analysis of the STM observation as a function of the irradiation dose. Structural surface modifications are discussed as well as the signature of photochemical processes.

VUV laser photodesorption of hydrogen from Si(100)(2 1): H surface assisted by scanning tunneling microscope

VUV laser photodesorption of hydrogen from Si(100)(2 $\,{{\bf\times}}\,$ 1): H surface assisted by scanning tunneling microscope